Materials modification by MeV ion implantation = Modification des matériaux par implantation ioniqueSARIS, F. W.Vacuum. 1989, Vol 39, Num 2-4, pp 173-176, issn 0042-207XConference Paper

The crystallization temperature of amorphous transtion-metal alloysDE REUS, R; SARIS, F. W.Materials letters (General ed.). 1990, Vol 9, Num 12, pp 487-493, issn 0167-577XArticle

Silicon epitaxy and pulsed laser irradiation in ultra-high vacuumDE JONG, T; SARIS, F. W; KISTEMAKER, J et al.Vacuum. 1983, Vol 33, Num 9, pp 543-546, issn 0042-207XArticle

Modification of engineering silicon nitride ceramics by energetic-ion bombardmentBOLSE, W; PETEVES, S. D; SARIS, F. W et al.Applied physics. A, Solids and surfaces. 1994, Vol 58, Num 5, pp 493-502, issn 0721-7250Article

Avoiding end-of-range dislocation in ion-implanted siliconACCO, S; CUSTER, J. S; SARIS, F. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 2-3, pp 168-174, issn 0921-5107Article

Stability of Ir-Ta diffusion barriersDE REUS, R; SARIS, F. W; BARBOUR, J. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1990, Vol 7, Num 1-2, pp 127-134, issn 0921-5107Article

Search for giant magnetic moments in ion-beam-synthesized α″-Fe₁₆N₂WEBER, T; DE WIT, L; SARIS, F. W et al.Thin solid films. 1996, Vol 279, Num 1-2, pp 216-220, issn 0040-6090Article

Optimization of polycrystalline silicon solar cells produced by ion-implantation and pulsed laser annealingSINKE, W; VAN SARK, W; DOORN, S et al.Solar energy R & D in the European community. Series C. Photovoltaic power generation. 1983, Vol 3, pp 62-66Article

Use of the effective of formation rule for predicting phase formation sequence in al-ni systemsPRETORIUS, R; DE REUS, R; VREDENBERG, A. M et al.Materials letters (General ed.). 1990, Vol 9, Num 12, pp 494-499, issn 0167-577XArticle

Time evolution of dislocation formation in ion implanted siliconLIEFTING, J. R; CUSTER, J. S; SARIS, F. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 25, Num 1, pp 60-67, issn 0921-5107Article

Oxygen in titanium nitride diffusion barriersSINKE, W; FRIJLINK, G. P. A; SARIS, F. W et al.Applied physics letters. 1985, Vol 47, Num 5, pp 471-473, issn 0003-6951Article

Prediction of phase formation sequence and phase stability in binary metal-aluminum thin-film systems using the effective heat of formation rulePRETORIUS, R; VREDENBERG, A. M; SARIS, F. W et al.Journal of applied physics. 1991, Vol 70, Num 7, pp 3636-3646, issn 0021-8979Article

Dislocation formation in silicon implanted at different temperaturesLIEFTING, J. .R; CUSTER, J. S; SCHREUTELKAMP, R. J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1992, Vol 15, Num 2, pp 173-186, issn 0921-5107Article

Stability of amorphous ir-ta diffusion barriers between Cu and SiDE REUS, R; KOPER, R. J. I. M; ZIJLEMAKER, H et al.Materials letters (General ed.). 1990, Vol 9, Num 12, pp 500-503, issn 0167-577XArticle

Transient structural relaxation of amorphous siliconSINKE, W; WARABISAKO, T; MIYAO, M et al.Journal of non-crystalline solids. 1988, Vol 99, Num 2-3, pp 308-323, issn 0022-3093Article

A search for geometrical lattice matching in semiconductor heteroepitaxyMAREE, P. M. J; NAKAGAWA, K; SARIS, F. W et al.Applied surface science. 1987, Vol 28, Num 2, pp 128-134, issn 0169-4332Article

Thermal stability of thin-film amorphous W-Ru, W-Re, and Ta-Ir alloys = Stabilité thermique de couches minces amorphes d'alliages W-Ru, W-Re et Ta-IrDENIER VAN DER GON, A. W; BARBOUR, J. C; DE REUS, R et al.Journal of applied physics. 1987, Vol 61, Num 3, pp 1212-1215, issn 0021-8979Article

Electron irradiation-activated low-temperature annealing of phosphorus-implanted siliconMIYAO, M; POLMAN, A; SINKE, W et al.Applied physics letters. 1986, Vol 48, Num 17, pp 1132-1134, issn 0003-6951Article

Synthesis and sputtering of newly formed molecules by kiloelectronvolt ionsDE VRIES, A. E; HARING, R. A; HARING, A et al.Journal of physical chemistry (1952). 1984, Vol 88, Num 20, pp 4510-4512, issn 0022-3654Article

Improved device performance by multistep or carbon co-implantsLIEFTING, R; WIJBURG, R. C. M; CUSTER, J. S et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 1, pp 50-55, issn 0018-9383Article

Quench rate enhancement in pulsed melting of Si by processing under waterPOLMAN, A; SINKE, W; SARIS, F. W et al.Applied physics letters. 1988, Vol 52, Num 7, pp 535-537, issn 0003-6951Article

Failure temperature of amorphous Cu-Ta alloys as diffusion barriers in Al-Si contacts = Température de défaillance des alliages Cu-Ta amorphes comme barrières de diffusion dans les contacts Al-SiSARIS, F. W; HUNG, L. S; NASTASI, M et al.Applied physics letters. 1985, Vol 46, Num 7, pp 646-648, issn 0003-6951Article

Stability of amorphous Cu/Ta and Cu/W alloys = Stabilité des alliages amorphes Cu/Ta et Cu/WNASTASI, M; SARIS, F. W; HUNG, L. S et al.Journal of applied physics. 1985, Vol 58, Num 8, pp 3052-3058, issn 0021-8979Article

Electrically active, ion implanted boron at the solubility limit in siliconLIEFTING, J. R; SCHREUTELKAMP, R. J; VANHELLEMONT, J et al.Applied physics letters. 1993, Vol 63, Num 8, pp 1134-1136, issn 0003-6951Article

Avoiding preamorphization damage in MeV heavy ion-implanted siliconSCHREUTELKAMP, R. J; CUSTER, J. S; LIEFTING, J. R et al.Applied physics letters. 1991, Vol 58, Num 24, pp 2827-2829, issn 0003-6951Article